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NCEP60T15AG - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =60V,ID =150A RDS(ON) < 3.0mΩ @ VGS=10V (Typ:2.7mΩ) RDS(ON) < 3.3mΩ @ VGS=4.5V (Typ:2.9mΩ).
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram Marking and pin assignment DDDD DDDD.

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Datasheet Details

Part number NCEP60T15AG
Manufacturer NCE Power Semiconductor
File Size 338.66 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP60T15AG Datasheet
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http://www.ncepower.com Pb Free Product NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =150A RDS(ON) < 3.0mΩ @ VGS=10V (Typ:2.7mΩ) RDS(ON) < 3.3mΩ @ VGS=4.5V (Typ:2.
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